AO4906 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO4906
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO4906 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
efficiency further. Standard Product AO4906 is Pb-
free (meets ROHS & Sony 259 specifications).
AO4906L is a Green Product ordering option.
AO4906 and AO4906L are electrically identical.
Features
V_DS (V) = 30V
I_D = 7A (V_GS = 10V)
R_DS(ON) < 27mΩ (V_GS = 10V)
R_DS(ON) < 32mΩ (V_GS = 4.5V)
R_DS(ON) < 50mΩ (V_GS = 2.5V)
SCHOTTKY
V_DS (V) = 30V, I_F = 3A, V_F=0.5V@1A
D2 1 8 G2
D2 2 7 D1/S2/K
G1 3 6 D1/S2/K
S1/A 4 5 D1/S2/K
SOIC-8
D1
K
A
G1
G2
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^A
Pulsed Drain Current^B
T_A=25°C
T_A=70°C
I_D
I_DM
Schottky reverse voltage
V_KA
Continuous Forward Current^A
Pulsed Forward Current^B
T_A=25°C
T_A=70°C
I_F
I_FM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
MOSFET
30
±12
7
6
40
2
1.44
-55 to 150
D2
S2
Schottky
30
3
2
40
2
1.44
-55 to 150
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient^A
t ≤ 10s
Maximum Junction-to-Ambient^A
Steady-State
Maximum Junction-to-Lead^C
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient^A
t ≤ 10s
Maximum Junction-to-Ambient^A
Steady-State
Maximum Junction-to-Lead^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
Typ
48
74
35
47.5
71
32
Max
62.5
110
40
62.5
110
40
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.