AO4904 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO4904
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4904 uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard Product AO4904 is Pb-free (meets ROHS &
Sony 259 specifications). AO4904L is a Green Product
ordering option. AO4904 and AO4904L are electrically
identical.
Features
V_DS (V) = 30V
I_D = 6.9A (V_GS = 10V)
R_DS(ON) < 27mΩ (V_GS = 10V)
R_DS(ON) < 32mΩ (V_GS = 4.5V)
R_DS(ON) < 50mΩ (V_GS = 2.5V)
SCHOTTKY
V_DS (V) = 30V, I_F = 3A, V_F=0.5V@1A
D1
S2 1 8 D2
G2 2 7 D2
S1/A 3 6 D1/K
G1 4 5 D1/K
SOIC-8
G1
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^A
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Schottky reverse voltage
V_KA
Continuous Forward Current^A
T_A=25°C
T_A=70°C
I_F
Pulsed Forward Current ^B
I_FM
Power Dissipation
Junction and Storage Temperature Range
T_A=25°C
T_A=70°C
P_D
T_J, T_STG
K
A
G2
MOSFET
30
±12
6.9
5.8
40
2
1.44
-55 to 150
D2
S2
Schottky
30
3
2
40
2
1.44
-55 to 150
Parameter: Thermal Characteristics MOSFET
Symbol
Typ
Max
Maximum Junction-to-Ambient^A
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
R_θJA
48
74
62.5
110
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
35
40
Thermal Characteristics Schottky
Maximum Junction-to-Ambient^A
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
R_θJA
47.5
71
62.5
110
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
32
40
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.