AO4892 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 100V Dual N-Channel MOSFET

AO4892
100V Dual N-Channel MOSFET
General Description
Product Summary
The AO4892 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of R_DS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=4.5V)
100% UIS Tested
100% R_g Tested
100V
4A
< 68mΩ
< 94mΩ
SOIC-8
D1
Top View
Bottom View
Top View
S1 1
G1 2
S2 3
G2 4
8 _D1
7 _D1
6 _D2
G1
5 _D2
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
100
±20
4
3
25
4
0.8
2.0
1.3
-55 to 150
G2
S1
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Max
62.5
90
40
D2
S2
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Nov. 2012
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