AO4882 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 40V Dual N-Channel MOSFET

AO4882
40V Dual N-Channel MOSFET
General Description
Product Summary
The AO4882 uses advanced trench technology to provide
excellent R_DS(ON) with low gate charge. This is an all
purpose device that is suitable for use in a wide range of
power conversion applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=4.5V)
100% UIS Tested
100% R_g Tested
40V
8A
< 19mΩ
< 27mΩ
Top View
SOIC-8
Bottom View
Top View
S2 1
8 D2
G2 2
7 ^D2
S1 3
6 D1
G1 4
5 D1
G1
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
Power Dissipation ^B
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
40
±20
8
6
40
15
11
2
1.3
-55 to 150
D1
G2
S1
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Max
62.5
90
40
D2
S2
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Dec 2011
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