AO4842_12 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – 30V Dual N-Channel MOSFET

AO4842
30V Dual N-Channel MOSFET
General Description
The AO4842 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in
buck converters.
Product Summary
V_DS (V) = 30V
I_D = 7.7A
(V_GS = 10V)
R_DS(ON) < 21mΩ (V_GS = 10V)
R_DS(ON) < 30mΩ (V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
Top View
S2 1
8 D2
G2 2
7 ^D2
S1 3
6 D1
G1 4
5 D1
G1
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^AF
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
7.7
6.5
64
2
1.44
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
50
82
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
41
D1
G2
S1
Max
62.5
110
50
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com