AO4840 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO4840
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4840 uses advanced trench technology
MOSFETs to provide excellent R_DS(ON) and low gate
charge. This dual device is suitable for use as a load
switch or in PWM applications. Standard Product
AO4840 is Pb-free (meets ROHS & Sony 259
specifications). AO4840L is a Green Product
ordering option. AO4840 and AO4840L are
electrically identical.
V_DS (V) = 40V
I_D = 6A (V_GS=10V)
R_DS(ON) < 31mΩ (V_GS=10V)
R_DS(ON) < 45mΩ (V_GS=4.5V)
S2 1 8 D2
G2 2 7 D2
S1 ^{3 6} D1
G1 ^{4 5} D1
SOIC-8
D2
D1
G2
S2
G1
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Max
40
±20
6
5
20
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
48
62.5
74
110
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
35
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.