AO4836 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO4836
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4836 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in
buck converters. It is ESD protected. AO4836 is Pb-
free (meets ROHS & Sony 259 specifications).
AO4836L is a Green Product ordering option.
AO4836 and AO4836L are electrically identical.
Features
V_DS (V) = 30V
I_D = 7.2A
R_DS(ON) < 24mΩ (V_GS = 10V)
R_DS(ON) < 40mΩ (V_GS = 4.5V)
ESD rating: 1500V (HBM)
S2 1 8 D2
G2 2 7 D2
S1 ^{3 6} D1
G1 ^{4 5} D1
SOIC-8
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
7.2
6.1
30
2
1.44
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
55
92
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
37
Max
62.5
110
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.