AO4832_11 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V Dual N-Channel MOSFET

AO4832
30V Dual N-Channel MOSFET
General Description
Product Summary
The AO4832 uses advanced trench technology to provide
excellent R_DS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and
general purpose applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=4.5V)
100% UIS Tested
100% R_g Tested
30V
10A
< 13mΩ
< 17.5mΩ
Top View
SOIC-8
Bottom View
Top View
S2 1
8
G2 2
7
S1 3
6
G1 4
5
D2
D2
D1
D1 G1
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_D
I_DM
I_AS, I_AR
E_AS, E_AR
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
10
8
55
22
24
2
1.3
-55 to 150
D1
G2
S1
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Max
62.5
90
40
D2
S2
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Jan. 2010
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