AO4828_10 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – 60V Dual N-Channel MOSFET

AO4828
60V Dual N-Channel MOSFET
General Description
The AO4828 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Features
V_DS (V) = 60V
I_D = 4.5A (V_GS = 10V)
R_DS(ON) < 56mΩ (V_GS = 10V)
R_DS(ON) < 77mΩ (V_GS = 4.5V)
100% UIS tested
100% Rg tested
Top View
SOIC-8
Bottom View
Pin1
Top View
D
D
1
2
S2
D2
G2
D2
S1
D1
G1
D1 G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^AF
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation T_A=70°C
Avalanche Current ^B
Repetitive avalanche energy 0.1mH ^B
P_D
I_AR, I_AS
E_AR, E_AS
Junction and Storage Temperature Range T_J, T_STG
Maximum
60
±20
4.5
3.6
20
2
1.28
19
18
-55 to 150
Units
V
V
A
W
A
mJ
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
48
74
62.5
110
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
35
60
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com