AO4826_10 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – 60V Dual N-Channel MOSFET

AO4826
60V Dual N-Channel MOSFET
General Description
The AO4826 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Product Summary
V_DS (V) = 60V
I_D = 6.3A (V_GS = 10V)
R_DS(ON) < 25mΩ (V_GS = 10V)
R_DS(ON) < 30mΩ (V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
Pin1
Top View
S2
D2
G2
D2
S1
D1
G1
D1
G1
D1
G2
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
60
±20
6.3
5
40
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
50
73
62.5
110
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
31
40
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com