AO4824L Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 30V Dual N-Channel MOSFET

AO4824L
30V Dual N-Channel MOSFET
General Description
The AO4824L uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters.
Features
Q1
V_DS (V) = 30V
I_D = 8.5A
R_DS(ON) < 17mΩ
R_DS(ON) < 27mΩ
Q2
V_DS(V) = 30V
I_D=9.8A
(V_GS = 10V)
<13mΩ
(V_GS = 10V)
<15mΩ
(V_GS = 4.5V)
Top View
SOIC-8
Bottom View
Top View
S2 1
8
G2 2
7
S1 3
6
G1 4
5
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
D2
D2
D1
D1 G1
D1
G2
S1
Max Q1
30
±20
8.5
6.8
30
2
1.28
-55 to 150
Max Q2
30
±12
9.8
7.8
40
2
1.28
-55 to 150
Parameter: Thermal Characteristics MOSFET Q1
Symbol
Typ
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
R_θJA
48
74
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
35
Max
62.5
110
40
Parameter: Thermal Characteristics MOSFET Q2
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
48
74
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
35
Max
62.5
110
40
D2
S2
Units
V
V
A
W
°C
Units
°C/W
Units
°C/W
Alpha & Omega Semiconductor, Ltd.