AO4824 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4824
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4824 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. Standard Product AO4824 is Pb-free
(meets ROHS & Sony 259 specifications). AO4824L
is a Green Product ordering option. AO4824 and
AO4824L are electrically identical.
Features
Q1
V_DS (V) = 30V
I_D = 8.5A
R_DS(ON) < 17mΩ
R_DS(ON) < 27mΩ
Q2
V_DS(V) = 30V
I_D=9.8A
(V_GS = 10V)
<13mΩ
(V_GS = 10V)
<15mΩ
(V_GS = 4.5V)
SOIC-8
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain _TA=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current^B
I_DM
T_A=25°C
Power Dissipation T_A=70°C
Junction and Storage Temperature Range
P_D
T_J, T_STG
Max Q1
30
±20
8.5
6.8
30
2
1.28
-55 to 150
Max Q2
30
±12
9.8
7.8
40
2
1.28
-55 to 150
Parameter: Thermal Characteristics MOSFET Q1 Symbol
Typ
Maximum Junction-to-Ambient^A
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
R_θJA
48
74
Maximum Junction-to-Lead^C
Steady-State
R_θJL
35
Max
62.5
110
40
Parameter: Thermal Characteristics MOSFET Q2 Symbol
Typ
Maximum Junction-to-Ambient^A
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
R_θJA
48
74
Maximum Junction-to-Lead^C
Steady-State
R_θJL
35
Max
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
Units
°C/W
Alpha & Omega Semiconductor, Ltd.