AO4821_10 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 12V Dual P-Channel MOSFET

AO4821
12V Dual P-Channel MOSFET
General Description
Product Summary
The AO4821 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch.
V_DS
I_D (at V_GS=-4.5V)
R_DS(ON) (at V_GS=-4.5V)
R_DS(ON) (at V_GS =-2.5V)
R_DS(ON) (at V_GS =-1.8V)
100% UIS Tested
100% Rg Tested
-12V
-9A
< 19mΩ
< 24mΩ
< 30mΩ
Top View
SOIC-8
Bottom View
Top View
S2 1
8 D2
Rg
G2 2
S1 3
7
D2 _G1
6 D1
G1 4
5 D1
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-12
±8
-9
-7
-60
2
1.28
-55 to 150
D1
1
G2
S1
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Max
62.5
90
40
D2
Rg
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 4: Nov 2010
www.aosmd.com
Page 1 of 5