AO4821 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual P-Channel Enhancement Mode Field Effect Transistor

AO4821
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4821 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. Standard Product
AO4821 is Pb-free (meets ROHS & Sony 259
specifications). AO4821L is a Green Product ordering
option. AO4821 and AO4821L are electrically
Features
V_DS (V) = -12V
I_D = -8 A (V_GS = -4.5V)
R_DS(ON) < 18mΩ (V_GS = -4.5V)
R_DS(ON) < 22mΩ (V_GS = -2.5V)
R_DS(ON) < 29mΩ (V_GS = -1.8V)
ESD Rating: 4KV HBM
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-12
±8
-8
-6.7
-20
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
48
74
Steady-State
R_θJL
35
Max
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.