AO4816 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO4816
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4816 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. This
dual device is suitable for use as a load switch or in
PWM applications. Standard Product AO4816 is Pb-
free (meets ROHS & Sony 259 specifications).
AO4816L is a Green Product ordering option.
AO4816 and AO4816L are electrically identical.
Features
V_DS (V) = 30V
I_D = 8.5A
R_DS(ON) < 17mΩ (V_GS = 20V)
R_DS(ON) < 20mΩ (V_GS = 10V)
R_DS(ON) < 46mΩ (V_GS = 4.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±25
8.5
6.5
40
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient^A
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
R_θJA
48
62.5
74
110
Maximum Junction-to-Lead^C
Steady-State
R_θJL
33
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.