AO4813_11 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V Dual P-Channel MOSFET

AO4813
30V Dual P-Channel MOSFET
General Description
Product Summary
The AO4813 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for load switch
and battery protection applications.
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS=-10V)
R_DS(ON) (at V_GS = -4.5V)
100% UIS Tested
100% R_g Tested
-30V
-7.1A
< 25mΩ
< 40mΩ
SOIC-8
Top View
Bottom View
D
Top View
S2
1
8 D2
G2
2
7 D2
S1
3
6 D1
G1
4
5 D1
G
G
S
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_D
I_DM
I_AS, I_AR
E_AS, E_AR
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±20
-7.1
-5.6
-40
-27
36
2
1.3
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Max
62.5
90
40
D
S
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 9: April 2011
www.aosmd.com
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