AO4807 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual P-Channel Enhancement Mode Field Effect Transistor

AO4807
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4807 uses advanced trench technology to
provide excellent R_DS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications. Standard Product
AO4807 is Pb-free (meets ROHS & Sony 259
specifications). AO4807L is a Green Product ordering
option. AO4807 and AO4807L are electrically
identical.
Features
V_DS (V) = -30V
I_D = -6 A (V_GS = -10V)
R_DS(ON) < 35mΩ (V_GS = -10V)
R_DS(ON) < 58mΩ (V_GS = -4.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-30
±20
-6
-5
-30
2
1.44
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
48
74
62.5
110
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
35
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W