AO4806_11 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – 20V Dual N-Channel MOSFET

AO4806
20V Dual N-Channel MOSFET
General Description
The AO4806 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. They
offer operation over a wide gate drive range from
1.8V to 12V. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional
load switch, facilitated by its common-drain
configuration.
Product Summary
V_DS (V) = 20V
I_D = 9.4A (V_GS = 10V)
R_DS(ON) < 14mΩ (V_GS = 10V)
R_DS(ON) < 15mΩ (V_GS = 4.5V)
R_DS(ON) < 21mΩ (V_GS = 2.5V)
R_DS(ON) < 30mΩ (V_GS = 1.8V)
ESD Rating: 2000V HBM
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
Top View
S2 1
8 D2
G2 2
7 ^D2
S1 3
6 D1
G1
G1 4
5 D1
D1
G2
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Maximum
20
±12
9.4
7.5
40
2
1.28
-55 to 150
Typ
45
72
34
S1
Max
62.5
110
40
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.