AO4805_10 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 30V Dual P-Channel MOSFET

AO4805
30V Dual P-Channel MOSFET
General Description
Product Summary
The AO4805 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for load switch
and battery protection applications.
V_DS
I_D (at V_GS=-20V)
R_DS(ON) (at V_GS=-20V)
R_DS(ON) (at V_GS =-10V)
100% UIS Tested
100% R_g Tested
-30V
-9A
< 15mΩ
< 18mΩ
Top View
SOIC-8
Bottom View
Top View
S2
1
8 D2
G2
2
7 D2
S1
3
6 D1
G1
4
5 D1 _G1
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_D
I_DM
I_AS, I_AR
E_AS, E_AR
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±25
-9
-7
-50
33
54
2
1.3
-55 to 150
D1
G2
S1
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Max
62.5
90
40
D2
S2
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 7: December 2010
www.aosmd.com
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