AO4803A Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual P-Channel Enhancement Mode Field Effect Transistor

AO4803A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4803A uses advanced trench technology to
provide excellent R_DS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4803A is Pb-free
(meets ROHS & Sony 259 specifications)
Features
V_DS (V) = -30V
I_D = -5 A (V_GS = -10V)
R_DS(ON) < 46mΩ (V_GS = -10V)
R_DS(ON) < 74mΩ (V_GS = -4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested!
SOIC-8
Top View
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^AF
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.3mH ^B
E_AR
Junction and Storage Temperature Range T_J, T_STG
Maximum
-30
±20
-5
-4
-30
2
1.3
11
18
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
48
74
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
35
Max
62.5
110
40
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com