AO4801_11 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 30V P-Channel MOSFET

AO4801
30V P-Channel MOSFET
General Description
Product Summary
The AO4801 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications. It may be used in a
common drain arrangement to form a bidirectional
blocking switch.
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS=-10V)
R_DS(ON) (at V_GS =-4.5V)
R_DS(ON) (at V_GS =-2.5V)
100% UIS Tested
100% R_g Tested
-30V
-5A
< 48mΩ
< 57mΩ
< 80mΩ
SOIC-8
D1
Top View
Bottom View
SOIC-8
Top View
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1
G1 4 5 D1
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.3mH ^C
I_D
I_DM
I_AS, I_AR
E_AS, E_AR
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±12
-5
-4
-28
11
18
2
1.3
-55 to 150
G2
S1
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Max
62.5
90
40
D2
S2
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 4: Feb. 2011
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