AO4801A Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual P-Channel Enhancement Mode Field Effect Transistor

AO4801A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4801A uses advanced trench technology to
provide excellent R_DS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4801A is Pb-free
(meets ROHS & Sony 259 specifications)
Features
V_DS (V) = -30V
I_D =-5.6A (V_GS = 10V)
R_DS(ON) < 42mΩ (V_GS = 10V)
R_DS(ON) < 52mΩ (V_GS = 4.5V)
R_DS(ON) < 75mΩ (V_GS = 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SOIC-8
Top View
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
V_DS
-30
Gate-Source Voltage
V_GS
±12
Continuous Drain T_A=25°C
Current ^AF
T_A=70°C
I_DSM
Pulsed Drain Current ^B
I_DM
Avalanche Current ^B
I_AR
Repetitive avalanche energy L=0.3mH ^B
E_AR
5.6
4.2
4.5
3.4
-30
11
18
Power Dissipation
T_A=25°C
T_A=70°C
2.0
1.1
P_DSM
1.3
0.7
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
t ≤ 10s
Steady-State
R_θJA
Steady-State
R_θJL
Typ
48
74
35
Max
62.5
110
40
Units
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com