AO4800B_11 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V Dual N-Channel MOSFET

AO4800B
30V Dual N-Channel MOSFET
General Description
The AO4800B uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in buck
converters.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
R_DS(ON) (at V_GS = 2.5V)
100% UIS Tested
100% R_g Tested
30V
6.9A
< 27mΩ
< 32mΩ
< 50mΩ
Top View
SOIC-8
Bottom View
Top View
S2 ₁
G2 ₂
S1 ₃
G1 ₄
8 ^D2
7 ^D2
6 ^D1
5 ^{D1 G1}
D1
G2
S1
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_D
I_DM
I_AS, I_AR
E_AS, E_AR
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±12
6.9
5.8
30
14
10
2
1.3
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Max
62.5
90
40
D1
S2
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 4: Dec 2011
www.aosmd.com
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