AO4800B Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO4800B, AO4800BL
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4800B/L uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in buck
converters. Standard Product AO4800B/L is Pb-free
(meets ROHS & Sony 259 specifications).
Features
V_DS (V) = 30V
I_D = 6.9A (V_GS = 10V)
R_DS(ON) < 27mΩ (V_GS = 10V)
R_DS(ON) < 32mΩ (V_GS = 4.5V)
R_DS(ON) < 50mΩ (V_GS = 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested!
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^AF
T_A=70°C
I_D
Pulsed Drain Current^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.3mH^B
E_AR
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
6.9
5.8
40
1.9
1.2
12
22
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient^AF
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
R_θJA
55
90
62.5
110
Maximum Junction-to-Lead^C
Steady-State
R_θJL
40
48
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com