AO4726 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4726
N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
SRFET ^TM The AO4726/L uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent R _DS(ON) and low gate charge.
This device is suitable for use as a low side FET in
SMPS, load switching and general purpose
applications. AO4726 and AO4726L are electrically
identical.
-RoHS Compliant
-AO4726L is Halogen Free
Features
V_DS (V) = 30V
I_D =18A (V_GS = 10V)
R_DS(ON) < 6mΩ (V_GS = 10V)
R_DS(ON) < 7mΩ (V_GS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D
S
D
S
D
S
D
G
D
SRFET ^TM
G
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current ^AF
T_A=70°C
I_DSM
Pulsed Drain Current ^B
I_DM
Avalanche Current ^B
I_AR
Repetitive avalanche energy L=0.3mH ^B
E_AR
Power Dissipation
T_A=25°C
T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±12
18
14
80
42
265
3.1
2.0
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
t ≤ 10s
Steady-State
R_θJA
Steady-State
R_θJL
Typ
32
60
17
Max
40
75
24
Units
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com