AO4724_10 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AO4724
30V N-Channel MOSFET
SRFET ^TM
General Description
SRFET ^TM The AO4724 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent R_DS(ON),and low gate
charge. This device is suitable for use as a low
side FET in SMPS, load switching and general
purpose applications.
Product Summary
V_DS (V) = 30V
I_D = 10.5A
(V_GS = 10V)
R_DS(ON) < 17.5mΩ (V_GS = 10V)
R_DS(ON) < 29 mΩ (V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
D
SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
S
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Maximum
Parameter
Symbol
10 Sec Steady State
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain ^TA^=25°C
Current ^AF
T_A=70°C
Pulsed Drain Current ^B
10.5
7.7
I_D
8.5
6.2
I_DM
80
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.3mH ^B
E_AR
3.1
1.7
2.0
1.1
13
25
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Units
V
V
A
W
A
mJ
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^AF t ≤ 10s
Maximum Junction-to-Ambient ^A Steady-State
R_θJA
31
59
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com