AO4720_10 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AO4720
30V N-Channel MOSFET
SRFET ^TM
General Description
SRFET ^TM The AO4720 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent R_DS(ON),and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose
applications.
Product Summary
V_DS (V) = 30V
I_D =13A
(V_GS = 10V)
R_DS(ON) < 11mΩ (V_GS = 10V)
R_DS(ON) < 17.5mΩ (V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
G
S
S
S
D
SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain ^TA^=25°C
Current ^AF
T_A=70°C
Pulsed Drain Current ^B
Avalanche Current ^C
Repetitive avalanche energy L=0.3mH ^C
T_A=25°C
Power Dissipation T_A=70°C
Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_DSM
I_DM
I_AR
E_AR
P_DSM
T_J, T_STG
Max
30
±20
13
11
120
21
66
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ
32
60
17
Max
40
75
24
Units
V
V
A
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com