AO4720 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4720
N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
SRFET ^TM The AO4720 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent R_DS(ON),and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose
applications.
Standard Product AO4720 is Pb-free (meets ROHS
& Sony 259 specifications).
Features
V_DS (V) = 30V
I_D =13A
(V_GS = 10V)
R_DS(ON) < 11mΩ (V_GS = 10V)
R_DS(ON) < 17.5mΩ (V_GS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
S
D
S
D
S
D
G
D
D
SRFET ^TM
G
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Max
Parameter
Symbol 10 Sec Steady State
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain T_A=25°C
Current ^AF
T_A=70°C
I_DSM
Pulsed Drain Current ^B
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
13
10
10.5
7.8
120
21
66
Power Dissipation
T_A=25°C
T_A=70°C
P_DSM
3.1
1.7
2.0
1.1
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ
32
60
17
Max
40
75
24
Units
V
V
A
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com