AO4718 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

General Description
SRFET ^TM The AO4718 uses advanced trench
technology with a monolithically integrated
Schottky diode to provide excellent R_DS(ON),and
low gate charge. This device is suitable for use
as a low side FET in SMPS, load switching and
general purpose applications.
AO4718
30V N-Channel MOSFET
SRFET ^TM
Features
V_DS (V) = 30V
I_D =15A (V_GS = 10V)
R_DS(ON) < 9mΩ (V_GS = 10V)
R_DS(ON) < 14mΩ (V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
Bottom View
D
D
D
D
D
G
S
S
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain ^TA^=25°C
Current ^AF
T_A=70°C
Pulsed Drain Current ^B
Avalanche Current ^B
Avalanche energy L=0.3mH ^B
V_GS
I_DSM
I_DM
I_AS, I_AR
E_AS, E_AR
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
15
12
80
25
94
3.1
2.0
-55 to 150
SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
Units
V
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
t ≤ 10s
Steady-State
R_θJA
Steady-State
R_θJL
Typ
32
60
17
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com