AO4716 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4716
N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
Features
SRFET ^TM AO4716 uses advanced trench technology with
a monolithically integrated Schottky diode to provide
excellent R_DS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load switching
and general purpose applications. Standard Product
AO4716 is Pb-free (meets ROHS & Sony 259
specifications).
V_DS (V) = 30V
I_D =16.5A (V_GS = 10V)
R_DS(ON) < 7mΩ (V_GS = 10V)
R_DS(ON) < 10mΩ (V_GS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
S
D
S
D
S
D
G
D
D
SRFET^TM
Soft Recovery MOSFET:
G
Integrated Schottky Diode
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Maximum
Parameter
Symbol
10 Sec Steady State
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_A=25°C
Current ^AF
T_A=70°C
I_DSM
Pulsed Drain Current ^B
I_DM
Avalanche Current ^B
I_AR
Repetitive avalanche energy L=0.3mH ^B
E_AR
16.5
12.0
13.0
9.6
180
25
94
Power Dissipation
T_A=25°C
T_A=70°C
P_DSM
3.1
1.7
2.0
1.1
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Units
V
V
A
A
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^AF
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com