AO4714_11 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AO4714
30V N-Channel MOSFET
SRFET ^TM
General Description
SRFET ^TM AO4714 uses advanced trench technology
with a monolithically integrated Schottky diode to
provide excellent R_DS(ON),and low gate charge. This
device is suitable for use as a low side FET in SMPS,
load switching and general purpose applications.
Product Summary
V_DS (V) = 30V
I_D =20A (V_GS = 10V)
R_DS(ON) < 4.7mΩ (V_GS = 10V)
R_DS(ON) < 6.7mΩ (V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
D
SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
S
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^F
T_A=70°C
I_DSM
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^F T_A=70°C
Avalanche Current ^B
Repetitive avalanche energy L=0.3mH ^B
P_DSM
I_AR
E_AR
Junction and Storage Temperature Range T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
Symbol
R_θJA
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
Maximum
30
±20
20
16
100
3.0
2.0
30
135
-55 to 150
Typ
31
59
16
Max
41
75
24
Units
V
V
A
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com