AO4712_12 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AO4712
30V N-Channel MOSFET
SRFET ^TM
General Description
Product Summary
SRFET^TM AO4712 uses advanced trench technology with
a monolithically integrated Schottky diode to provide
excellent R_DS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
30V
13A
< 11mΩ
< 14mΩ
100% UIS Tested
100% R_g Tested
Top View
D
D
D
D
SOIC-8
Bottom View
D
SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
S
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
T_A=25°C
Power Dissipation ^B T_A=70°C
V_DS
V_GS
I_D
I_DM
I_AS, I_AR
E_AS, E_AR
P_D
Junction and Storage Temperature Range
T_J, T_STG
G
S
Maximum
30
±12
13
10
68
15
11
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
32
60
Maximum Junction-to-Lead
Steady-State
R_θJL
17
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 8: December 2011
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