AO4708 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4708
N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
SRFET ^TM AO4708 uses advanced trench technology
with a monolithically integrated Schottky diode to
provide excellent R_DS(ON),and low gate charge. This
device is suitable for use as a low side FET in SMPS,
load switching and general purpose applications.
Standard Product AO4708 is Pb-free (meets ROHS
& Sony 259 specifications). AO4708L is a Green
Product ordering option. AO4708L and AO4708 are
electrically identical.
Features
V_DS (V) = 30V
I_D =15A (V_GS = 10V)
R_DS(ON) < 8.7mΩ (V_GS = 10V)
R_DS(ON) < 10.5mΩ (V_GS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
S
D
S
D
S
D
G
D
D
G
S
SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_DSM
Pulsed Drain Current ^B
I_DM
Avalanche Current ^B
I_AR
Repetitive avalanche energy L=0.3mH ^B
E_AR
Power Dissipation^A
T_A=25°C
T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
15
12
80
25
94
3.1
2.0
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
32
60
40
75
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
17
24
Units
V
V
A
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.