AO4704 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO4704
N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description
Features
The AO4704 uses advanced trench technology to
provide excellent R_DS(ON), shoot-through immunity and
body diode characteristics.This device is suitable for
use as a synchronous switch in PWM applications.
The co-packaged Schottky Diode boosts efficiency
further. AO4704 is Pb-free (meets ROHS & Sony
259 specifications). AO4704L is a Green Product
ordering option. AO4704 and AO4704L are
electrically identical.
V_DS (V) = 30V
I_D = 13 A (V_GS = 10V)
R_DS(ON) < 11.5mΩ (V_GS = 10V)
R_DS(ON) < 13mΩ (V_GS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
SOIC-8
S/A 1 8 D/K
S/A ^{2 7} D/K
S/A ^{3 6} D/K
G ^{4 5} D/K
D
K
G
S
A
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
MOSFET
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±12
Continuous Drain Current^A
Pulsed Drain Current^B
T_A=25°C
T_A=70°C
I_D
I_DM
13
10.4
40
Schottky reverse voltage
V_KA
Continuous Forward Current^A
T_A=25°C
T_A=70°C
I_F
Pulsed Diode Forward Current^B
I_FM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
3.1
2
Junction and Storage Temperature Range ^TJ^{, T}STG
-55 to 150
Schottky
30
4.4
3.2
30
3.1
2
-55 to 150
Units
V
V
A
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.