AO4702 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO4702
N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description
Features
The AO4702 uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge. A Schottky Diode is
packaged in parallel to improve device performance in
synchronous recitification applications, or H-bridge
configurations. Standard Product AO4702 is Pb-free
(meets ROHS & Sony 259 specifications). AO4702L is a
Green Product ordering option. AO4702and AO4702L are
electrically identical.
V_DS (V) = 30V
I_D = 11A (V_GS = 10V)
R_DS(ON) < 16mΩ (V_GS = 10V)
R_DS(ON) < 25mΩ (V_GS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
S
D
S
D
S
D
G
D
SOIC-8
D
K
G
S
A
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
MOSFET
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain Current ^A
T_A=25°C
T_A=70°C
I_D
11
9.3
Pulsed Drain Current ^B
I_DM
50
Schottky reverse voltage
V_KA
Continuous Forward Current ^A
T_A=25°C
T_A=70°C
I_F
Pulsed Diode Forward Current ^B
I_FM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
3
2
Junction and Storage Temperature Range ^TJ^{, T}STG
-55 to 150
Schottky
30
4.4
3.2
30
3
2
-55 to 150
Units
V
V
A
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.