AO4622 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO4622
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AO4622 uses advanced trench
technology MOSFETs to provide excellent
R_DS(ON) and low gate charge. The
complementary MOSFETs may be used to
form a level shifted high side switch, and for a
host of other applications. Standard product
AO4622 is Pb-free (meets ROHS & Sony
259 specifications).
n-channel
V_DS (V) = 20V
I_D = 7.3A (V_GS=4.5V)
R_DS(ON)
< 23mΩ (V_GS=10V)
< 30mΩ (V_GS=4.5V)
< 84mΩ (V_GS=2.5V)
p-channel
-20V
-5A (V_GS=-4.5V)
R_DS(ON)
< 53mΩ (V_GS = -4.5V)
< 87mΩ (V_GS = -2.5V)
S1 1 8 D1
G1 2 7 D1
S2 3 6 D2
G2 4 5 D2
SOIC-8
D1
D2
G1
S1
n-channel
G2
S2
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±16
Continuous Drain T_A=25°C
7.3
Current ^AF
T_A=70°C
I_D
6.2
Pulsed Drain Current ^B
I_DM
35
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.3mH ^B
E_AR
2
1.44
13
25
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Max p-channel
-20
±12
-5
-4.2
-25
2
1.44
13
25
-55 to 150
Units
V
V
A
W
A
mJ
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
48 62.5 °C/W
74
110 °C/W
35
40 °C/W
48 62.5 °C/W
74
110 °C/W
35
40 °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com