AO4619 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO4619
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4619 uses advanced trench
technology MOSFETs to provide excellent
R_DS(ON) and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications. Standard
Product AO4619 is Pb-free (meets ROHS
& Sony 259 specifications).
Features
n-channel
V_DS (V) = 30V
I_D = 7.4A (V_GS=10V)
R_DS(ON)
< 24mΩ (V_GS=10V)
< 36mΩ (V_GS=4.5V)
p-channel
-30V
-5.2A (V_GS = -10V)
R_DS(ON)
< 48m Ω (V_GS = -10V)
< 74m Ω (V_GS = -4.5V)
S2 1 8 D2
G2 2 7 D2
S1 ^{3 6} D1
G1 ^{4 5} D1
D2
D1
SOIC-8
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_A=25°C
7.4
Current ^F
T_A=70°C
I_D
6
Pulsed Drain Current ^B
I_DM
35
Power Dissipation^A
T_A=25°C
T_A=70°C
P_D
2
1.3
Avalanche Current ^B
I_AR
13
Repetitive avalanche energy 0.3mH ^B
E_AR
25
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Max p-channel
-30
±20
-5.2
-4.2
-25
2
1.3
11
18
-55 to 150
Units
V
V
A
W
A
mJ
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
50
62.5 °C/W
82
110 °C/W
41
50 °C/W
50
62.5 °C/W
82
110 °C/W
41
50 °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com