AO4618 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – 40V Complementary MOSFET

AO4618
40V Complementary MOSFET
General Description
Product Summary
The AO4618 uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge. This
complementary N and P channel MOSFET configuration
is ideal for low Input Voltage inverter applications.
N-Channel
V_DS= 40V
I_D= 8A (V_GS=10V)
R_DS(ON)
< 19mΩ (V_GS=10V)
< 27mΩ (V_GS=4.5V)
100% UIS Tested
100% R_g Tested
P-Channel
-40V
-7A (V_GS=-10V)
R_DS(ON)
< 23mΩ (VGS=-10V)
< 30mΩ (VGS=-4.5V)
100% UIS Tested
100% R_g Tested
Top View
SOIC-8
Bottom View
Top View
D2
D1
S2 1
8 D2
G2 2
7
D2
S1 3
6 D1 G2
G1 4
5 D1
G1
S2
S1
Pin1
n-channel
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max n-channel Max p-channel
Drain-Source Voltage
V_DS
40
-40
Gate-Source Voltage
V_GS
±20
±20
Continuous Drain ^TA^=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
8
-7
I_D
6
-5.5
I_DM
40
-35
I_AS
15
-35
E_AS
11
61
T_A=25°C
Power Dissipation ^B T_A=70°C
2
2
P_D
1.3
1.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Units
V
V
A
A
mJ
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Max
Units
62.5
°C/W
90
°C/W
40
°C/W
Rev 0 : Dec. 2011
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