AO4617 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO4617
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4617 uses advanced trench
technology MOSFETs to provide excellen
R_DS(ON) and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard Product AO4617
is Pb-free (meets ROHS & Sony 259
specifications). AO4617L is a Green
Product ordering option. AO4617 and
AO4617L are electrically identical.
Features
n-channel
V_DS (V) = 40V
I_D = 6A (V_GS=10V)
R_DS(ON)
< 32mΩ (V_GS=10V)
< 45mΩ (V_GS=4.5V)
p-channel
-40V
-5A (V_GS = -10V)
R_DS(ON)
< 48mΩ (V_GS = -10V)
< 75mΩ (V_GS = -4.5V)
ESD rating: 3000V (HBM)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
S2 1 8 D2
G2 2 7 D2
S1 ^{3 6} D1
G1 ^{4 5} D1
D2
D1
G2
G1
SOIC-8
S2
n-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
40
Gate-Source Voltage
V_GS
±20
Continuous Drain T_A=25°C
6
Current ^A
T_A=70°C
I_D
5
Pulsed Drain Current^B
I_DM
30
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.3mH^B
E_AR
2
1.28
13
25
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
S1
p-channel
Max p-channel
-40
±20
-5
-4
-25
2
1.28
17
43
-55 to 150
Units
V
V
A
W
A
mJ
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient^A
t ≤ 10s
Maximum Junction-to-Ambient^A
Steady-State
Maximum Junction-to-Lead^C
Steady-State
Maximum Junction-to-Ambient^A
t ≤ 10s
Maximum Junction-to-Ambient^A
Steady-State
Maximum Junction-to-Lead^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
48 62.5 °C/W
74
110 °C/W
35
50 °C/W
48 62.5 °C/W
74
110 °C/W
35
50 °C/W
Alpha & Omega Semiconductor, Ltd.