AO4615 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO4615
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4615 uses advanced trench
technology MOSFETs to provide
excellent R_DS(ON) and low gate charge.
The complementary MOSFETs may be
used to form a level shifted high side
switch, and for a host of other
applications. It is ESD protected.
Standard product AO4615 is Pb-free
(meets ROHS & Sony 259
specifications). AO4615L is a Green
Product ordering option. AO4615 and
AO4615L are electrically identical
Features
n-channel
p-channel
V_DS (V) = 30V
-30V
I_D = 7.2A (V_GS=10V) -5.7A (V _GS=10V)
R_DS(ON)
R_DS(ON)
< 24mΩ (V_GS=10V)
< 39m Ω (V_GS = -10V)
< 40mΩ (V_GS=4.5V)
< 62m Ω (V_GS = -4.5V)
ESD rating: 1500V (HBM)
P-channel MOSFET has an additional R_OC < 1MΩ for
open circuit protection.
S2 1 8 D2
G2 2 7 D2
S1 ^{3 6} D1
G1 ^{4 5} D1
SOIC-8
D2
D1
G2
S2
n-channel
G1
R_OC
S1
p-channel
Absolute Maximum Ratings T _A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain T_A=25°C
7.2
Current ^A
T_A=70°C
I_D
6.1
Pulsed Drain Current ^B
I_DM
30
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.1mH ^B
E_AR
2
1.44
15
11
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±20
-5.7
-4.9
-30
2
1.44
20
20
-55 to 150
Units
V
V
A
W
A
mJ
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
n-ch
n-ch
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
n-ch
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
p-ch
p-ch
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
p-ch
Max
Units
55 62.5 °C/W
92
110 °C/W
37
50 °C/W
48 62.5 °C/W
87
110 °C/W
37
50 °C/W
Alpha & Omega Semiconductor, Ltd.