AO4614B Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO4614B
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4614B/L uses advanced trench technology
MOSFETs to provide excellent R_DS(ON) and low gate
charge. The complementary MOSFETs may be
used in H-bridge, Inverters and other applications.
AO4614B and AO4614BL are electrically identical.
-RoHS Compliant
-AO4614BL is Halogen Free
Features
n-channel
V_DS (V) = 40V, I_D = 6A (V_GS=10V)
R_DS(ON)< 30mΩ (V_GS=10V)
R_DS(ON)< 38mΩ (V_GS=4.5V)
p-channel
V_DS (V) = -40V, I_D = -5A (V_GS=-10V)
R_DS(ON)< 45mΩ (VGS= -10V)
R_DS(ON)< 63mΩ (VGS= -4.5V)
D2
D1
S2 1 8 D2
G2 2 7 D2
S1 ^{3 6} D1
G1 ^{4 5} D1
SOIC-8
G2
S2
G1
S1
n-channel
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
40
Gate-Source Voltage
V_GS
±20
Continuous Drain T_A=25°C
6
Current ^A
T_A=70°C
I_D
5
Pulsed Drain Current^B
I_DM
30
Avalanche Current ^B
I_AR
14
Repetitive avalanche energy L=0.1mH^B
E_AR
9.8
Power Dissipation
T_A=25°C
T_A=70°C
2
P_D
1.28
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Max p-channel
-40
±20
-5
-4
-30
-20
20
2
1.28
-55 to 150
Units
V
V
A
mJ
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient^A
t ≤ 10s
Maximum Junction-to-Ambient^A
Steady-State
Maximum Junction-to-Lead^C
Steady-State
Maximum Junction-to-Ambient^A
t ≤ 10s
Maximum Junction-to-Ambient^A
Steady-State
Maximum Junction-to-Lead^C
Steady-State
Symbol Device Typ
R_θJA
n-ch
n-ch
48
74
R_θJL
n-ch
35
R_θJA
p-ch
p-ch
48
74
R_θJL
p-ch
35
Max Units
62.5 °C/W
110 °C/W
50 °C/W
62.5 °C/W
110 °C/W
50 °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com