AO4613_10 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 30V Dual P + N-Channel MOSFET

AO4613
30V Dual P + N-Channel MOSFET
General Description
The AO4613 uses advanced trench technology
MOSFETs to provide excellent R_DS(ON) and low
gate charge. The complementary MOSFETs may
be used to form a level shifted high side switch,
and for a host of other applications.
Product Summary
N-Channel
V_DS (V) = 30V
I_D = 7.2A (V_GS=10V)
R_DS(ON)
< 24mΩ (V_GS=10V)
< 40mΩ (V_GS=4.5V)
P-Channel
-30V
-6.1A (V_GS=10V)
R_DS(ON)
< 37mΩ (V_GS = -10V)
< 60mΩ (V_GS = -4.5V)
ESD Protected
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
Pin1
D1
D2
Top View
S2
G2
S1
G1
D2
D2
G1
D1
D1
S1
p-channel
G2
S2
n-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_A=25°C
Current ^A
T_A=70°C
Pulsed Drain Current ^B
7.2
I_D
6.1
I_DM
30
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.1mH ^B
E_AR
2
1.44
15
11
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Max p-channel
-30
±20
-6.1
-5.1
-30
2
1.44
20
20
-55 to 150
Units
V
V
A
W
A
mJ
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
Maximum Junction-to-Lead ^C
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Steady-State
t ≤ 10s
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
Typ
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Max
55
62.5
92
110
37
50
48
62.5
84
110
37
50
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.