AO4611_10 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 60V Dual P + N-Channel MOSFET

AO4611
60V Dual P + N-Channel MOSFET
General Description
Product Summary
The AO4611 uses advanced trench technology
MOSFETs to provide excellent R_DS(ON) and low
gate charge. The complementary MOSFETs may
be used to form a level shifted high side switch,
and for a host of other applications.
N-Channel
V_DS (V) = 60V
I_D = 6.3A (V_GS=10V)
R_DS(ON)
< 25mΩ (V_GS=10V)
< 30mΩ (V_GS=4.5V)
100% UIS Tested
100% Rg Tested
P-Channel
-60V
-4.9A
< 42mΩ (V_GS = -10V)
< 52mΩ (V_GS = -4.5V)
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
D2
D1
Top View
S2
D2
G2
D2
S1
D1
G1
D1 ^G2
G1
S2
S1
Pin1
n-channel
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
60
Gate-Source Voltage
V_GS
±20
Continuous Drain TA=25°C
6.3
Current ^A
T_A=70°C
I_D
5
Pulsed Drain Current ^B
I_DM
40
Power Dissipation
T_A=25°C
T_A=70°C
P_D
2
1.28
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Max p-channel
-60
±20
-4.9
-3.9
-30
2
1.28
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Symbol Device
Typ
t ≤ 10s
Steady-State
R_θJA
n-ch
n-ch
48
74
Maximum Junction-to-Lead ^C
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Steady-State
t ≤ 10s
Steady-State
R_θJL
n-ch
35
R_θJA
p-ch
p-ch
48
74
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
p-ch
35
Max
Units
62.5
°C/W
110
°C/W
60
°C/W
62.5
°C/W
110
°C/W
40
°C/W
Alpha & Omega Semiconductor, Ltd.