AO4609 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – Complementary Enhancement Mode Field Effect Transistor

AO4609
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4609 uses advanced trench technology
MOSFETs to provide excellent R_DS(ON) and low
gate charge. The complementary MOSFETs
may be used to form a level shifted high side
switch, and for a host of other applications.
Standard Product AO4609 is Pb-free (meets
ROHS & Sony 259 specifications). AO4609L is a
Green Product ordering option. AO4609 and
AO4609L are electrically identical.
Features
n-channel
p-channel
V_DS (V) = 30V
-30V
I_D = 8.5A (VGS=10V) -3A (VGS = -10V)
R_DS(ON)
R_DS(ON)
< 18mΩ (V_GS=10V) < 130mΩ (V_GS = -10V)
< 28mΩ (V_GS=4.5V) < 180mΩ (V_GS = -4.5V)
< 260mΩ (V_GS = -2.5V)
D2
D1
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain T_A=25°C
8.5
Current ^A
T_A=70°C
I_D
6.6
Pulsed Drain Current ^B
I_DM
40
Power Dissipation
T_A=25°C
T_A=70°C
P_D
2
1.28
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Max p-channel
-30
±12
-3
-2.4
-6
2
1.28
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
48
62.5 °C/W
74
110 °C/W
35
40 °C/W
56
62.5 °C/W
81
110 °C/W
40
48 °C/W