AO4607 Datasheet, PDF (1/8 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO4607
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4607 uses advanced trench
technology MOSFETs to provide excellen
R_DS(ON) and low gate charge. The
complementary MOSFETs may be used
in inverter and other applications. A
Schottky diode is co-packaged with the n-
channel FET to minimize body diode
losses. AO4607 is Pb-free (meets ROHS
& Sony 259 specifications). AO4607L is
a Green Product ordering option.
AO4607 and AO4607L are electrically
identical.
Features
n-channel
V_DS (V) = 30V
I_D = 6.9A (V_GS=10V)
R_DS(ON)
< 28mΩ (V_GS=10V)
< 42mΩ (V_GS=4.5V)
p-channel
-30V
-6A (V_GS=1-0V)
R_DS(ON)
< 35mΩ (V_GS = -10V)
< 58mΩ (V_GS =- 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
S2/A 1 8 D2/K
G2 2 7 D2/K
S1 ^{3 6} D1
G1 ^{4 5} D1
SOIC-8
D
K
A
G
S2
n-channel
D
G
S
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain T_A=25°C
6.9
Current ^A
T_A=70°C
I_D
5.8
Pulsed Drain Current^B
I_DM
30
Power Dissipation
T_A=25°C
T_A=70°C
P_D
2
1.28
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Max p-channel
-30
±20
-6
-5
-30
2
1.28
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward T_A=25°C
Current ^A
T_A=70°C
Pulsed Diode Forward Current^B
T_A=25°C
Power Dissipation ^A T_A=70°C
Junction and Storage Temperature Range
Symbol
V_DS
I_D
I_DM
P_D
T_J, T_STG
Maximum Schottky
30
3
2
20
2
1.28
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.