AO4601 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO4601
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4601 uses advanced trench technology
MOSFETs to provide excellent R_DS(ON) and low
gate charge. The complementary MOSFETs may
be used to form a level shifted high side switch,
and for a host of other applications. Standard
Product AO4601 is Pb-free (meets ROHS & Sony
259 specifications). AO4601L is a Green Product
ordering option. AO4601 and AO4601L are
Features
n-channel
p-channel
V_DS (V) = 30V
-30V
I_D = 4.7A (VGS=10V) -8A (VGS = -20V)
R_DS(ON)
R_DS(ON)
< 55mΩ (V_GS=10V) < 18mΩ (V_GS = -20V)
< 70mΩ (V_GS=4.5V) < 19mΩ (V_GS = -10V)
< 110mΩ (V_GS = 2.5V)
D2
D1
S2 1 8 D2
G2 2 7 D2
S1 ^{3 6} D1
G1 ^{4 5} D1
SOIC-8
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±12
Continuous Drain
T_A=25°C
4.7
Current ^A
T_A=70°C
I_D
4
Pulsed Drain Current ^B
I_DM
30
Power Dissipation
T_A=25°C
T_A=70°C
P_D
2
1.44
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Max p-channel
-30
±25
-8
-6.9
-50
2
1.44
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
52
62.5 °C/W
78
110 °C/W
48
60 °C/W
50
62.5 °C/W
73
110 °C/W
31
40 °C/W
Alpha & Omega Semiconductor, Ltd.