AO4600 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO4600
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4600 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO4600 is Pb-free (meets ROHS
& Sony 259 specifications). AO4600L is a Green
Product ordering option. AO4600 and AO4600L are
electrically identical.
Features
n-channel
p-channel
V_DS (V) = 30V
-30V
I_D = 6.9A (V_GS = 10V) -5A (V_GS = -10V)
R_DS(ON)
< 27mΩ
< 49mΩ (V_GS =- 10V)
< 32mΩ
< 64mΩ (V_GS =- 4.5V)
< 50mΩ
< 120mΩ (V_GS = -2.5V)
S2 1 8 D2
G2 2 7 D2
S1 ^{3 6} D1
G1 ^{4 5} D1
SOIC-8
D2
D1
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±12
Continuous Drain T_A=25°C
6.9
Current ^A
T_A=70°C
I_D
5.8
Pulsed Drain Current^B
I_DM
40
Power Dissipation
T_A=25°C
T_A=70°C
P_D
2
1.44
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Max p-channel
-30
±12
-5
-4.2
-30
2
1.44
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Typ
Maximum Junction-to-Ambient^A
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
R_θJA
48
74
Maximum Junction-to-Lead^C
Steady-State
R_θJL
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.