AO4496 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4496
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4496/L uses advanced trench technology to
provide excellent R_DS(ON) with low gate charge. This
device is suitable for use as a DC-DC converter
application. AO4496 and AO4496L are electrically
identical.
-RoHS Compliant
-AO4496L is Halogen Free
Features
V_DS (V) = 30V
I_D = 10A
R_DS(ON) < 19.5mΩ
R_DS(ON) < 26mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
UIS TESTED!
Rg, Ciss, Coss, Crss Tested
S
D
S
D
S
D
G
D
SOIC-8
D
G
S
Absolute Maximum Ratings T_J=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Avalanche Current ^G
I_AR
Repetitive avalanche energy L=0.1mH ^G
E_AR
Power Dissipation ^{A TA=25°C}
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
10
7.5
50
17
14
3.1
2.0
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A Steady State
R_θJA
31
59
40
75
Maximum Junction-to-Lead ^C
Steady State R_θJL
16
24
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com