AO4492L Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4492L
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4492L uses advanced trench technology to
provide excellent R_DS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and
general purpose applications.
V_DS (V) = 30V
I_D = 13A
R_DS(ON) < 9.5mΩ
R_DS(ON) < 14mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% R _g Tested!
SOIC-8
D
D
G
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=70°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
Power Dissipation ^{B TC=25°C}
T_C=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
13
11
100
20
20
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
t ≤ 10s
Steady-State
R_θJA
31
59
40
75
Maximum Junction-to-Lead
Steady-State
R_θJL
16
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com