AO4488 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4488
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4488/L uses advanced trench technology to
provide excellent R_DS(ON) with low gate charge.
This device is ESD protected and it is suitable for use as
a load switch or in PWM applications. AO4488 and
AO4488L are electrically identical.
-RoHS Compliant
-AO4488L is Halogen Free
Features
V_DS (V) = 30V
I_D = 20A
(V_GS = 10V)
R_DS(ON) < 4.6mΩ (V_GS = 10V)
R_DS(ON) < 6.4mΩ (V_GS = 4.5V)
S
D
S
D
S
D
G
D
SOIC-8
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Avalanche Current ^G
I_AR
Repetitive avalanche energy L=0.3mH ^G
E_AR
20
15
17
12
80
50
375
Power Dissipation ^{A TA=25°C}
T_A=70°C
3.1
1.7
P_D
2.0
1.1
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A Steady State
R_θJA
31
59
40
75
Maximum Junction-to-Lead ^C
Steady State R_θJL
16
24
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com